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Transmission-Electron-Microscopy-Generated Atomic Defects in Two-Dimensional Nanosheets and Their Integration in Devices for Electronic and Optical Sensing

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    Transmission-Electron-Microscopy-Generated Atomic Defects in Two-Dimensional Nanosheets and Their Integration in Devices for Electronic and Optical Sensing
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    • Moritz Quincke*
      Moritz Quincke
      Central Facility Electron Microscopy, Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
      *Email: [email protected]. Phone: +49 731 50 21514.
      More by Moritz Quincke
      Orcidhttps://orcid.org/0000-0002-1918-2129
    • Tibor Lehnert
      Tibor Lehnert
      Central Facility Electron Microscopy, Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
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    • Itai Keren
      Itai Keren
      The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
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    • Narine Moses Badlyan
      Narine Moses Badlyan
      Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
      More by Narine Moses Badlyan
      Orcidhttps://orcid.org/0000-0003-0992-6507
    • Fabian Port
      Fabian Port
      Institute of Experimental Physics, Ulm University, 89081 Ulm, Germany
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    • Manuel Goncalves
      Manuel Goncalves
      Institute of Experimental Physics, Ulm University, 89081 Ulm, Germany
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    • Michael J. Mohn
      Michael J. Mohn
      Central Facility Electron Microscopy, Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
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    • Janina Maultzsch
      Janina Maultzsch
      Department of Physics, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
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    • Hadar Steinberg
      Hadar Steinberg
      The Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
      More by Hadar Steinberg
      Orcidhttps://orcid.org/0000-0002-7409-5087
    • Ute Kaiser*
      Ute Kaiser
      Central Facility Electron Microscopy, Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
      *Email: [email protected]. Phone: +49 731 50 22950.
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    ACS Applied Nano Materials

    Cite this: ACS Appl. Nano Mater. 2022, 5, 8, 11429–11436
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    https://doi.org/10.1021/acsanm.2c02491
    Published August 15, 2022
    Copyright © 2022 American Chemical Society
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    Abstract

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    For electronic and optical applications of two-dimensional (2D) materials and their vertical heterostructures, it is important to know the positions, densities, and atomic structures of crystallographic defects. Thus, to understand the role of these well-defined defects on the properties of 2D heterostructure devices, it is desirable to combine device measurements with atomically resolved transmission electron microscopy (TEM) experiments. Here, the electron beam is used not only to image atomic defects but also to create and manipulate them. However, TEM poses special requirements to sample preparation because it needs freestanding samples. Our presented generic sample platform enables TEM imaging of freestanding 2D materials, followed by experiments on the same sample area placed on an arbitrary substrate or embedded into a heterostructure device. A sacrificial copper layer and a hydrophobic polystyrene film enable the transfer of a strongly adhered 2D material flake from a TEM grid to the substrate. Proof-of-principle experiments show that signatures of electron-beam-induced defects can be measured in electric tunneling measurements and photoluminescence. Our transfer procedure works reliably for monolayer and few-layer transition-metal dichalcogenides such as MoS2, MoSe2, WSe2, MoTe2, hBN, and graphene. It can also be suitable for the assembly of defect-based sensors and photon sources.

    Copyright © 2022 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.2c02491.

    • Reverse-transfer processes of several 2D materials (Figure S1), wetting experiments on polystyrene, poly(methyl methacrylate), and pristine SiO2 (Figure S2), detailed step-by-step illustration of the transfer of a MoS2 flake from polystyrene to an arbitrary substrate (Figure S3), EDX spectrum to characterize the contamination on a reverse-transferred flake (Figure S4), thickness determination of the contamination from AFM (Figure S5), and detailed characteristic curves of the MoS2 flake from Figure 8 (Figure S6) (PDF)

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    This article is cited by 3 publications.

    1. Moritz Quincke, Manuel Mundszinger, Johannes Biskupek, Ute Kaiser. Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS2 Stack. Nano Letters 2024, 24 (34) , 10496-10503. https://doi.org/10.1021/acs.nanolett.4c02391
    2. Narine Moses Badlyan, Moritz Quincke, Ute Kaiser, Janina Maultzsch. TEM-processed defect densities in single-layer TMDCs and their substrate-dependent signature in PL and Raman spectroscopy. Nanotechnology 2024, 35 (43) , 435001. https://doi.org/10.1088/1361-6528/ad6875
    3. Johannes Müller, Max Heyl, Thorsten Schultz, Kristiane Elsner, Marcel Schloz, Steffen Rühl, Hélène Seiler, Norbert Koch, Emil J. W. List-Kratochvil, Christoph T. Koch. Probing Crystallinity and Grain Structure of 2D Materials and 2D‐Like Van der Waals Heterostructures by Low‐Voltage Electron Diffraction. physica status solidi (a) 2024, 221 (1) https://doi.org/10.1002/pssa.202300148
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    ACS Applied Nano Materials

    Cite this: ACS Appl. Nano Mater. 2022, 5, 8, 11429–11436
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsanm.2c02491
    Published August 15, 2022
    Copyright © 2022 American Chemical Society
    Request reuse permissions

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