One-Step Synthesis of Two-Dimensional Metal–Semiconductor Circuitry Based on W-Triggered Spatial Phase EngineeringClick to copy article linkArticle link copied!
- Yi ZengYi ZengSchool of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Yi Zeng
- Shengqiang WuShengqiang WuSchool of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaMore by Shengqiang Wu
- Xiaolong XuXiaolong XuSchool of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Xiaolong Xu
- Biao ZhangBiao ZhangSchool of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaMore by Biao Zhang
- Bo HanBo HanSchool of Physics, Peking University, Beijing 100871, ChinaElectron Microscopy Laboratory and International Center for Quantum Materials, Peking University, Beijing 100871, ChinaMore by Bo Han
- Zijing ZhaoZijing ZhaoSchool of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaMore by Zijing Zhao
- Yu PanYu PanSchool of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Yu Pan
- Feng Wang
- Qi WangQi WangSchool of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Qi Wang
- Yuqia RanYuqia RanSchool of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Yuqia Ran
- Peng GaoPeng GaoSchool of Physics, Peking University, Beijing 100871, ChinaElectron Microscopy Laboratory and International Center for Quantum Materials, Peking University, Beijing 100871, ChinaMore by Peng Gao
- Xiaoxu Zhao*Xiaoxu Zhao*E-mail: [email protected]School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaMore by Xiaoxu Zhao
- Yu Ye*Yu Ye*E-mail: [email protected]School of Physics, Peking University, Beijing 100871, ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, ChinaMore by Yu Ye
- Yanglong Hou*Yanglong Hou*E-mail: [email protected]School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing 100871, ChinaMore by Yanglong Hou
Abstract
Molybdenum ditelluride (MoTe2) exhibits a variety of crystal phases, which can be phase-controlled by various external means, showing broad prospects in modern integrated circuits. The structure in which the semimetal 1T′ (or Td) phase electrode contacts the semiconductor 2H phase channel is considered an elegant solution for high-performance two-dimensional (2D) circuits because it achieves low contact resistance. However, most of the 2D metal–semiconductor structures for large-area integration use a two-step growth process, which puts forward high requirements for the secondary growth compatibility of the material. Here, we develop a method for the stable synthesis of the metallic MoxW1–xTe2 (0 < x < 1) by W-triggered spatial phase engineering, and we further obtain a large-area MoxW1–xTe2/2H-MoTe2 in-plane metal–semiconductor structure by one-step tellurization of a MoW/Mo periodic structure. Due to the unique 2D in-plane epitaxial mechanism of the phase transition from 1T′ to 2H, the highly crystalline semiconductor 2H-MoTe2 squeezes between two metallic MoxW1–xTe2 electrodes and forms a seamless coplanar contacted channel; thus, the fabricated field-effect transistors exhibit good electrical characteristics. In addition, large-area 2D metal–semiconductor heterostructure arrays can be transferred onto flexible substrates, showing promising applications in flexible electronics. Herein, one-step synthesis of large-area 2D in-plane metal–semiconductor arrays opens up new possibilities for future integrated high-performance logic circuits.
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