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Atomistic Interrogation of B–N Co-dopant Structures and Their Electronic Effects in Graphene
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    Atomistic Interrogation of B–N Co-dopant Structures and Their Electronic Effects in Graphene
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    MRSEC, Department of Chemistry, and Department of Physics, Columbia University, New York, New York 10027, United States
    Department of Science and Mathematics, Fashion Institute of Technology/State University of New York, New York, New York 10001, United States
    § Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
    Chemistry Department, Cornell University, Ithaca, New York 10065, United States
    # Materials Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899,United States
    Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
    *E-mail (T. Schiros): [email protected]
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    ACS Nano

    Cite this: ACS Nano 2016, 10, 7, 6574–6584
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    https://doi.org/10.1021/acsnano.6b01318
    Published June 21, 2016
    Copyright © 2016 American Chemical Society

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    Chemical doping has been demonstrated to be an effective method for producing high-quality, large-area graphene with controlled carrier concentrations and an atomically tailored work function. The emergent optoelectronic properties and surface reactivity of carbon nanostructures are dictated by the microstructure of atomic dopants. Co-doping of graphene with boron and nitrogen offers the possibility to further tune the electronic properties of graphene at the atomic level, potentially creating p- and n-type domains in a single carbon sheet, opening a gap between valence and conduction bands in the 2-D semimetal. Using a suite of high-resolution synchrotron-based X-ray techniques, scanning tunneling microscopy, and density functional theory based computation we visualize and characterize B–N dopant bond structures and their electronic effects at the atomic level in single-layer graphene grown on a copper substrate. We find there is a thermodynamic driving force for B and N atoms to cluster into BNC structures in graphene, rather than randomly distribute into isolated B and N graphitic dopants, although under the present growth conditions, kinetics limit segregation of large B–N domains. We observe that the doping effect of these BNC structures, which open a small band gap in graphene, follows the B:N ratio (B > N, p-type; B < N, n-type; B═N, neutral). We attribute this to the comparable electron-withdrawing and -donating effects, respectively, of individual graphitic B and N dopants, although local electrostatics also play a role in the work function change.

    Copyright © 2016 American Chemical Society

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.6b01318.

    • Figures showing an example of a rough graphene film; large-area topograph of sample BG2; additional B/N co-dopant configurations; visualization of the structures STM1 and STM2; correlation between computed work function shifts and Dirac point energy shifts; additional N 1s and C 1s XPS data for nitrogen-doped graphene; peak fitting of the experimental N 1s XPS data; and details of the peak fitting (PDF)

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    ACS Nano

    Cite this: ACS Nano 2016, 10, 7, 6574–6584
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.6b01318
    Published June 21, 2016
    Copyright © 2016 American Chemical Society

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