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Vapor-Phase Synthesis of Gallium Phosphide Nanowires
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    Vapor-Phase Synthesis of Gallium Phosphide Nanowires
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    Faculty of Engineering, Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602, and Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
    * To whom correspondence should be addressed. Tel.: +1-706-5424657. Fax: +1-706-542-8806. E-mail: [email protected]
    †Faculty of Engineering, University of Georgia.
    ‡Department of Physics and Astronomy, University of Georgia.
    §Oak Ridge National Laboratory.
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    Crystal Growth and Design

    Cite this: Cryst. Growth Des. 2009, 9, 1, 525–527
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    https://doi.org/10.1021/cg8008305
    Published November 17, 2008
    Copyright © 2008 American Chemical Society

    Abstract

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    Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 °C in a tube furnace system. The nanowires have diameters in the range of 25−100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga−P−O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III−V compound nanowires.

    Copyright © 2008 American Chemical Society

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    Cited By

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    This article is cited by 30 publications.

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    Crystal Growth and Design

    Cite this: Cryst. Growth Des. 2009, 9, 1, 525–527
    Click to copy citationCitation copied!
    https://doi.org/10.1021/cg8008305
    Published November 17, 2008
    Copyright © 2008 American Chemical Society

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