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Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

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Spin Convergence Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Korea
§ School of Nano-Bioscience and Chemical Engineering, KIER-UNIST Advanced Center for Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea
Creative Electrotechnology Research Center, Korea Electrotechnology Research Institute, Changwon 642-120, Korea
KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Korea
*Address correspondence to [email protected], [email protected]
Cite this: ACS Nano 2013, 7, 10, 9106–9114
Publication Date (Web):September 9, 2013
https://doi.org/10.1021/nn403715p
Copyright © 2013 American Chemical Society

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    Abstract

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    We demonstrate gate-controlled spin-orbit interaction (SOI) in InAs high-electron mobility transistor (HEMT) structures transferred epitaxially onto Si substrates. Successful epitaxial transfer of the multilayered structure after separation from an original substrate ensures that the InAs HEMT maintains a robust bonding interface and crystalline quality with a high electron mobility of 46200 cm2/(V s) at 77 K. Furthermore, Shubnikov-de Haas (SdH) oscillation analysis reveals that a Rashba SOI parameter (α) can be manipulated using a gate electric field for the purpose of spin field-effect transistor operation. An important finding is that the α value increases by about 30% in the InAs HEMT structure that has been transferred when compared to the as-grown structure. First-principles calculations indicate that the main causes of the large improvement in α are the bonding of the InAs HEMT active layers to a SiO2 insulating layer with a large band gap and the strain relaxation of the InAs channel layer during epitaxial transfer. The experimental results presented in this study offer a technological platform for the integration of III–V heterostructures onto Si substrates, permitting the spintronic devices to merge with standard Si circuitry and technology.

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    Contains details of illustrations of PMMA capping and micrographs during the selective wet-etching process. A Micrograph of a Hall bar pattern, EDS analysis, and AFM analysis. This material is available free of charge via the Internet at http://pubs.acs.org.

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