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Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer
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    Flexible and Transparent Dielectric Film with a High Dielectric Constant Using Chemical Vapor Deposition-Grown Graphene Interlayer
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    Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States
    Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
    § Department of Organic and Nano System Engineering, Konkuk University, Seoul, 143-701 Korea
    CNR-IDASC Sensor Lab, Department of Chemistry and Physics, University of Brescia, via Valotti, 9, Brescia 25133, Italy
    School of Mechanical Engineering, Sungkyunkwan University, Suwon, 440-746 Korea
    *Address correspondence to [email protected]
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    ACS Nano

    Cite this: ACS Nano 2014, 8, 1, 269–274
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    https://doi.org/10.1021/nn406058g
    Published December 4, 2013
    Copyright © 2013 American Chemical Society

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    We have devised a dielectric film with a chemical vapor deposited graphene interlayer and studied the effect of the graphene interlayer on the dielectric performance. The highly transparent and flexible film was a polymer/graphene/polymer ‘sandwich-structure’ fabricated by a one-step transfer method that had a dielectric constant of 51, with a dielectric loss of 0.05 at 1 kHz. The graphene interlayer in the film forms a space charge layer, i.e., an accumulation of polarized charge carriers near the graphene, resulting in an induced space charge polarization and enhanced dielectric constant. The characteristic of the space charge layer for the graphene dielectric film, the sheet resistance of the graphene interlayer, was adjusted through thermal annealing that caused partial oxidation. The dielectric film with higher sheet resistance due to the oxidized graphene interlayer had a significantly lower dielectric constant compared to that with the graphene with lower interlayer sheet resistance. Oxidizing the graphene interlayer yields a smaller and thinner space charge density in the dielectric film, ultimately leading to decreased capacitance. Considering the simplicity of the fabrication process and high dielectric performance, as well as the high transparency and flexibility, this film is promising for applications in plastic electronics.

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    SEM of the graphene dielectric film; capacitance densities of the dielectric film vs applied frequencies; schematic diagram of the mechanism for enhancing the capacitance; leakage current density vs applied field; intensity of the D- and 2D-bands of the graphene films and position of the 2D-band vs thermal annealing; dielectric constant of the graphene dielectric films vs sheet resistance of the graphene interlayer; tabular comparison of some dielectric properties for various composite materials. This material is available free of charge via the Internet at http://pubs.acs.org.

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    This article is cited by 62 publications.

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    ACS Nano

    Cite this: ACS Nano 2014, 8, 1, 269–274
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nn406058g
    Published December 4, 2013
    Copyright © 2013 American Chemical Society

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