Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

You’ve supercharged your research process with ACS and Mendeley!

STEP 1:
Click to create an ACS ID

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

MENDELEY PAIRING EXPIRED
Your Mendeley pairing has expired. Please reconnect
ACS Publications. Most Trusted. Most Cited. Most Read
Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing

OR SEARCH CITATIONS

My Activity
Publications
CONTENT TYPES

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2023, 15, 34, 40744-40752
    Functional Inorganic Materials and Devices

    Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame Sensing
    Click to copy article linkArticle link copied!

    • Zhaoying Xi
      Zhaoying Xi
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Zhaoying Xi
    • Zeng Liu*
      Zeng Liu
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      *Email: [email protected]
      More by Zeng Liu
      Orcidhttps://orcid.org/0000-0003-3215-7929
    • Lili Yang*
      Lili Yang
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      *Email: [email protected]
      More by Lili Yang
    • Kai Tang
      Kai Tang
      College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
      More by Kai Tang
    • Lei Li
      Lei Li
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Lei Li
    • Gaohui Shen
      Gaohui Shen
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Gaohui Shen
    • Maolin Zhang
      Maolin Zhang
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Maolin Zhang
    • Shan Li
      Shan Li
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Shan Li
    • Yufeng Guo
      Yufeng Guo
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      More by Yufeng Guo
    • Weihua Tang*
      Weihua Tang
      Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
      *Email: [email protected]
      More by Weihua Tang
    Other Access OptionsSupporting Information (1)

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2023, 15, 34, 40744–40752
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.3c07597
    Published August 17, 2023
    Copyright © 2023 American Chemical Society
    Request reuse permissions

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p–n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.

    Copyright © 2023 American Chemical Society

    Subjects

    what are subjects

    Keywords

    what are keywords

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.3c07597.

    • Linear current–voltage curves of the heterojunction-based PD; fitting response time at 8 V; photoelectric performance of the MSM device of ε-Ga2O3 and La2O3; and spectral response of the heterojunction (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!

    This article is cited by 3 publications.

    1. Hao Jing, Sui Mao, Hongpei Ji, Yadong Xu, Xing Wang, Jianguo Tang. Enhancing Solar-Blind Photodetectors with Ga2O3 Thin Films Using Pt Nanoparticles. ACS Applied Nano Materials 2024, Article ASAP.
    2. Hongyi Zhu, Xingchi Chen, Qixian Fan, Jiaxing Mao, Jian Chen, Mingkai Li, Yinmei Lu, Yunbin He. Ultrasensitive Dual-Junction-Coupled n-ZnO/n-Ga2O3/p-GaN-Based Self-Driven Broad-Band Ultraviolet Photodetector. ACS Photonics 2024, 11 (3) , 1293-1302. https://doi.org/10.1021/acsphotonics.3c01812
    3. Suhao Yao, Zeng Liu, Maolin Zhang, Lincong Shu, Zhaoying Xi, Lei Li, Sihan Yan, Yufeng Guo, Weihua Tang. Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport. ACS Applied Electronic Materials 2023, 5 (12) , 7061-7069. https://doi.org/10.1021/acsaelm.3c01371
    Download PDF
    Go to ACS Applied Materials & Interfaces
    Get e-Alerts
    Get e-Alerts

    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2023, 15, 34, 40744–40752
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.3c07597
    Published August 17, 2023
    Copyright © 2023 American Chemical Society
    Request reuse permissions

    Article Views

    1305

    Altmetric

    -

    Citations

    3
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.