Comprehensive Study on Ultra-Wide Band Gap La2O3/ε-Ga2O3 p–n Heterojunction Self-Powered Deep-UV Photodiodes for Flame SensingClick to copy article linkArticle link copied!
- Zhaoying XiZhaoying XiInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Zhaoying Xi
- Zeng Liu*Zeng Liu*Email: [email protected]Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Zeng Liu
- Lili Yang*Lili Yang*Email: [email protected]Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Lili Yang
- Kai TangKai TangCollege of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaMore by Kai Tang
- Lei LiLei LiInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Lei Li
- Gaohui ShenGaohui ShenInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Gaohui Shen
- Maolin ZhangMaolin ZhangInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Maolin Zhang
- Shan LiShan LiInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Shan Li
- Yufeng GuoYufeng GuoInnovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Yufeng Guo
- Weihua Tang*Weihua Tang*Email: [email protected]Innovation Center for Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaNational and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, ChinaMore by Weihua Tang
Abstract
![Abstract Image](/cms/10.1021/acsami.3c07597/asset/images/medium/am3c07597_0008.gif)
Solar-blind UV photodetectors have outstanding reliability and sensitivity in flame detection without interference from other signals and response quickly. Herein, we fabricated a solar-blind UV photodetector based on a La2O3/ε-Ga2O3 p–n heterojunction with a typical type-II band alignment. Benefiting from the photovoltaic effect formed by the space charge region across the junction interface, the photodetector exhibited a self-powered photocurrent of 1.4 nA at zero bias. Besides, this photodetector demonstrated excellent photo-to-dark current ratio of 2.68 × 104 under 254 nm UV light illumination and at a bias of 5 V, and a high specific detectivity of 2.31 × 1011 Jones and large responsivity of 1.67 mA/W were achieved. Importantly, the La2O3/ε-Ga2O3 heterojunction photodetector can rapidly respond to flames in milliseconds without any applied biases. Based on the performances described above, this novel La2O3/ε-Ga2O3 heterojunction is expected to be a candidate for future energy-efficient fire detection.
Cited By
This article is cited by 3 publications.
- Hao Jing, Sui Mao, Hongpei Ji, Yadong Xu, Xing Wang, Jianguo Tang. Enhancing Solar-Blind Photodetectors with Ga2O3 Thin Films Using Pt Nanoparticles. ACS Applied Nano Materials 2024, Article ASAP.
- Hongyi Zhu, Xingchi Chen, Qixian Fan, Jiaxing Mao, Jian Chen, Mingkai Li, Yinmei Lu, Yunbin He. Ultrasensitive Dual-Junction-Coupled n-ZnO/n-Ga2O3/p-GaN-Based Self-Driven Broad-Band Ultraviolet Photodetector. ACS Photonics 2024, 11
(3)
, 1293-1302. https://doi.org/10.1021/acsphotonics.3c01812
- Suhao Yao, Zeng Liu, Maolin Zhang, Lincong Shu, Zhaoying Xi, Lei Li, Sihan Yan, Yufeng Guo, Weihua Tang. Photogain-Enhanced Signal-to-Noise Performance of a Polycrystalline Sn:Ga2O3 UV Detector via Impurity-Level Transition and Multiple Carrier Transport. ACS Applied Electronic Materials 2023, 5
(12)
, 7061-7069. https://doi.org/10.1021/acsaelm.3c01371
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