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Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

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Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2024, 16, 17, 22207-22216
    Functional Inorganic Materials and Devices

    Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering
    Click to copy article linkArticle link copied!

    • Liang Yu
      Liang Yu
      Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
      School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
      More by Liang Yu
    • Xinyue Liu
      Xinyue Liu
      Guangdong Provincial Key Laboratory of Nanophotonic Manipulation, Institute of Nanophotonics, Jinan University, Guangzhou 511443, P. R. China
      More by Xinyue Liu
      Orcidhttps://orcid.org/0000-0002-2257-4801
    • Meifei Chen
      Meifei Chen
      Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
      More by Meifei Chen
    • Junhao Peng
      Junhao Peng
      School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
      More by Junhao Peng
      Orcidhttps://orcid.org/0000-0002-8904-9761
    • Ting Xu
      Ting Xu
      School of Material Science & Engineering, Shaanxi University of Science & Technology, Xi’an 710021, P. R. China
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    • Wei Gao
      Wei Gao
      School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P.R. China
      More by Wei Gao
      Orcidhttps://orcid.org/0000-0002-8159-3957
    • Mengmeng Yang
      Mengmeng Yang
      School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, Guangdong, P.R. China
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    • Chun Du
      Chun Du
      Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communication, Institute of Photonics Technology, Jinan University, Guangzhou 510632, P. R. China
      More by Chun Du
    • Jiandong Yao
      Jiandong Yao
      State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
      More by Jiandong Yao
    • Wei Song*
      Wei Song
      Analysis and Test Center, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
      *W.S.: email, [email protected]
      More by Wei Song
    • Huafeng Dong*
      Huafeng Dong
      School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, P. R. China
      *H.D: email, [email protected]
      More by Huafeng Dong
    • Jingbo Li
      Jingbo Li
      College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, P. R. China
      More by Jingbo Li
    • Zhaoqiang Zheng*
      Zhaoqiang Zheng
      Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
      *Z.Z.: email, [email protected]
      More by Zhaoqiang Zheng
      Orcidhttps://orcid.org/0000-0002-1699-2425
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2024, 16, 17, 22207–22216
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.4c03191
    Published April 17, 2024
    Copyright © 2024 American Chemical Society
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    Abstract

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    Two-dimensional (2D) gallium selenide (GaSe) holds great promise for pioneering advancements in photodetection due to its exceptional electronic and optoelectronic properties. However, in conventional photodetectors, 2D GaSe only functions as a photosensitive layer, failing to fully exploit its inherent photosensitive potential. Herein, we propose an ultrasensitive photodetector based on out-of-plane 2D GaSe/MoSe2 heterostructure. Through interfacial engineering, 2D GaSe serves not only as the photosensitive layer but also as the photoconductive gain and passivation layer, introducing a photogating effect and extending the lifetime of photocarriers. Capitalizing on these features, the device exhibits exceptional photodetection performance, including a responsivity of 28 800 A/W, specific detectivity of 7.1 × 1014 Jones, light on/off ratio of 1.2 × 106, and rise/fall time of 112.4/426.8 μs. Moreover, high-resolution imaging under various wavelengths is successfully demonstrated using this device. Additionally, we showcase the generality of this device design by activating the photosensitive potential of 2D GaSe with other transition metal dichalcogenides (TMDCs) such as WSe2, WS2, and MoS2. This work provides inspiration for future development in high-performance photodetectors, shining a spotlight on the potential of 2D GaSe and its heterostructure.

    Copyright © 2024 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.4c03191.

    • Calculation of the band structures of 2D GaSe and TMDCs; calculation of the surface potential difference, the carrier mobility, and the key figures-of-merit for photodetectors; additional AFM, KPFM and Raman characterization of the GaSe/TMDCs devices; additional optoelectronic characterizations of pure GaSe, TMDCs, and GaSe/TMDCs devices; comparison of the photodetection parameters between our devices and reported GaSe-based or MoSe2-based 2D photodetectors (PDF)

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2024, 16, 17, 22207–22216
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.4c03191
    Published April 17, 2024
    Copyright © 2024 American Chemical Society
    Request reuse permissions

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