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Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate

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Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Nano 2024, 18, 17, 11462-11473
    Article

    Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate
    Click to copy article linkArticle link copied!

    • Tao Zhu
      Tao Zhu
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      More by Tao Zhu
    • Kai Liu
      Kai Liu
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      More by Kai Liu
    • Yao Zhang
      Yao Zhang
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      More by Yao Zhang
    • Si Meng
      Si Meng
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      More by Si Meng
    • Mengfei He
      Mengfei He
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      More by Mengfei He
    • Yingli Zhang
      Yingli Zhang
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      More by Yingli Zhang
    • Minglu Yan
      Minglu Yan
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      More by Minglu Yan
    • Xiaoxiang Dong
      Xiaoxiang Dong
      Department of Physics, Xiamen University, Xiamen 361005, P. R. China
      More by Xiaoxiang Dong
    • Xiaobo Li
      Xiaobo Li
      Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, P. R. China
      More by Xiaobo Li
      Orcidhttps://orcid.org/0000-0003-3191-9995
    • Man Jiang*
      Man Jiang
      State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi’an 710069, P. R. China
      *Email: [email protected]
      More by Man Jiang
    • Hua Xu*
      Hua Xu
      Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, P. R. China
      *Email: [email protected]
      More by Hua Xu
      Orcidhttps://orcid.org/0000-0001-5277-7901
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    ACS Nano

    Cite this: ACS Nano 2024, 18, 17, 11462–11473
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    https://doi.org/10.1021/acsnano.4c02923
    Published April 17, 2024
    Copyright © 2024 American Chemical Society
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    Abstract

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    Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10–12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.4c02923.

    • Electrical transport properties of Ta2NiSe5 and WSe2 devices; transfer curves of Ta2NiSe5, WSe2, and WSe2/Ta2NiSe5 devices; tunneling mechanism fitting of the WSe2/Ta2NiSe5 heterostructure; output curves of the WSe2/Ta2NiSe5 heterostructure under dark and light irradiation; short-circuit current as a function of light power and corresponding fitting curve; electrical and photoelectrical properties of the WSe2/Ta2NiSe5 heterostructure with different WSe2 thicknesses; atomic structure of the Ta2NiSe5 crystal under side and top views; OM image of mechanical exfoliated Ta2NiSe5 nanosheet on the SiO2/Si substrate and its ARPRS; and schematic diagram of the test system for polarization imaging (PDF)

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    ACS Nano

    Cite this: ACS Nano 2024, 18, 17, 11462–11473
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.4c02923
    Published April 17, 2024
    Copyright © 2024 American Chemical Society
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