High-Performance Self-Powered WSe2/ReS2 Photodetector Enabled via Surface Charge Transfer DopingClick to copy article linkArticle link copied!
- Yaxin ZhanYaxin ZhanLab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Yaxin Zhan
- Zhangting Wu*Zhangting Wu*Email: [email protected]Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Zhangting Wu
- Peiyu Zeng
- Wenhui Wang
- Yuan JiangYuan JiangLab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Yuan Jiang
- Hui ZhengHui ZhengLab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Hui Zheng
- Peng ZhengPeng ZhengLab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Peng Zheng
- Liang ZhengLiang ZhengLab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Liang Zheng
- Yang Zhang*Yang Zhang*Email: [email protected]Lab for Nanoelectronics and NanoDevices, Department of Electronics Science and Technology, Hangzhou Dianzi University, Hangzhou 310018, ChinaMore by Yang Zhang
Abstract
![Abstract Image](/cms/10.1021/acsami.3c10654/asset/images/medium/am3c10654_0008.gif)
Two-dimensional (2D) van der Waals heterostructures based on various 2D transition metal dichalcogenides are widely used in photodetection applications. However, their response time and photoresponsivity are limited, posing a challenge for their applications in high-sensitivity photodetection. Surface charge transfer doping (SCTD) has emerged as a novel doping approach for low-dimensional materials with high specific surface area and attracted considerable attention, as it is simple and effective, does not damage the lattice, and considers various types of dopants. Herein, we prepare p–i–n junction-based photodetectors via the SCTD of WSe2/ReS2 heterojunctions using p-type dopant F4-TCNQ molecules, where doped WSe2 serves as a p-type semiconductor, undoped WSe2 acts as an intrinsic layer, and ReS2 functions as an n-type semiconductor. The surface-charge-transfer-doped WSe2/ReS2 heterojunction leads to a reduction in the Schottky barrier and an increase in the built-in electric field compared with the as-fabricated heterojunction. In the photovoltaic mode and under 785 nm laser illumination, the photodiode exhibits an increase in responsivity from 0.08 to 0.29 A/W, specific detectivity from 1.89 × 1012 to 8.02 × 1012 Jones, and the external quantum efficiency from 12.67 to 46.29%. Additionally, the p–i–n structure expands the depletion region width, resulting in a photovoltaic response time of 7.56/6.48 μs and a −3 dB cutoff frequency of over 85 kHz, an order of magnitude faster than the pristine response time. Herein, we derive an effective and simple scheme for designing high-performance, low-power optoelectronic devices based on 2D van der Waals heterostructures.
Cited By
This article is cited by 1 publications.
- Shuqi Yang, Zhangting Wu, Shuailong Wang, Peng Zheng, Yang Zhang. Significantly Enhanced Photoresponse of Self-Powered 2D MoS2/WS2 Heterojunction Photodiode via F4-TCNQ Doping. ACS Applied Electronic Materials 2024, 6
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, 3374-3384. https://doi.org/10.1021/acsaelm.4c00192
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